Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films

Schulz S, Fahrenholz S, Schuchmann D, Kuczkowski A, Assenmacher W, Reilmann F, Bahlawane N, Kohse-Höinghaus K (2007)
SURFACE & COATINGS TECHNOLOGY 201(22-23): 9071-9075.

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Zeitschriftenaufsatz | Veröffentlicht | Englisch
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Abstract / Bemerkung
Tailor-made single source precursors of the type [R2GaSbR'(2)](x) (R, R'=alkyl) have been prepared by 4 novel synthetic pathways. According to their very low vapor pressures, a specifically designed HV-MOCVD reactor was built, which can be used for the deposition of Gash material films. The influence of several process parameters such as substrate temperature and reactor geometry on the quality of the resulting films will be discussed. (c) 2007 Elsevier B.V. All rights reserved.
Erscheinungsjahr
Zeitschriftentitel
SURFACE & COATINGS TECHNOLOGY
Band
201
Zeitschriftennummer
22-23
Seite
9071-9075
ISSN
PUB-ID

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Schulz S, Fahrenholz S, Schuchmann D, et al. Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films. SURFACE & COATINGS TECHNOLOGY. 2007;201(22-23):9071-9075.
Schulz, S., Fahrenholz, S., Schuchmann, D., Kuczkowski, A., Assenmacher, W., Reilmann, F., Bahlawane, N., et al. (2007). Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films. SURFACE & COATINGS TECHNOLOGY, 201(22-23), 9071-9075. doi:10.1016/j.surfcoat.2007.03.045
Schulz, S., Fahrenholz, S., Schuchmann, D., Kuczkowski, A., Assenmacher, W., Reilmann, F., Bahlawane, N., and Kohse-Höinghaus, K. (2007). Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films. SURFACE & COATINGS TECHNOLOGY 201, 9071-9075.
Schulz, S., et al., 2007. Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films. SURFACE & COATINGS TECHNOLOGY, 201(22-23), p 9071-9075.
S. Schulz, et al., “Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films”, SURFACE & COATINGS TECHNOLOGY, vol. 201, 2007, pp. 9071-9075.
Schulz, S., Fahrenholz, S., Schuchmann, D., Kuczkowski, A., Assenmacher, W., Reilmann, F., Bahlawane, N., Kohse-Höinghaus, K.: Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films. SURFACE & COATINGS TECHNOLOGY. 201, 9071-9075 (2007).
Schulz, Stephan, Fahrenholz, Sonja, Schuchmann, Daniella, Kuczkowski, Andreas, Assenmacher, Wilftied, Reilmann, Frank, Bahlawane, Naoufal, and Kohse-Höinghaus, Katharina. “Single source precursor-based HV-MOCVD deposition of binary group 13-antimonide thin films”. SURFACE & COATINGS TECHNOLOGY 201.22-23 (2007): 9071-9075.