STM writing of artificial nanostructures in ultrathin PMMA and SAM resists and subsequent pattern transfer in a Mo/Si multilayer by reactive ion etching

Hartwich J, Dreeskornfeld L, Heisig V, Rahn S, Wehmeyer O, Kleineberg U, Heinzmann U (1998)
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 66: S685-S688.

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Konferenzbeitrag | Veröffentlicht | Englisch
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Abstract / Bemerkung
We report on the fabrication of artificial nanostructures in ultrathin resist films patterned by STM lithography in ultrahigh vacuum ambience. Two different types of resists, polymethylmethacrylate (PMMA) and alkanethiol-type self-assembled monolayer (SAM), have been patterned by an UHV-STM. The PMMA patterns were analyzed by atomic force microscopy (AFM); the SAM patterns were investigated by STM. Lines widths down to 75 nm were reproducibly achieved in PMMA with bias voltages up to 10 V and tip currents of 1 nA. Carbon build-up due to contamination writing and resist removal was observed with the STM patterning the SAM. The PMMA pattern was successfully transferred into the underlying Mo/Si multilayer substrate by fluorine reactive ion etching (RTE), showing STM lithography as an attractive alternative to conventional e-beam lithography for the fabrication of lateral nanostructures in multilayers.
Erscheinungsjahr
Band
66
Seite
S685-S688
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Hartwich J, Dreeskornfeld L, Heisig V, et al. STM writing of artificial nanostructures in ultrathin PMMA and SAM resists and subsequent pattern transfer in a Mo/Si multilayer by reactive ion etching. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. 1998;66:S685-S688.
Hartwich, J., Dreeskornfeld, L., Heisig, V., Rahn, S., Wehmeyer, O., Kleineberg, U., & Heinzmann, U. (1998). STM writing of artificial nanostructures in ultrathin PMMA and SAM resists and subsequent pattern transfer in a Mo/Si multilayer by reactive ion etching. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 66, S685-S688. doi:10.1007/s003390051222
Hartwich, J., Dreeskornfeld, L., Heisig, V., Rahn, S., Wehmeyer, O., Kleineberg, U., and Heinzmann, U. (1998). STM writing of artificial nanostructures in ultrathin PMMA and SAM resists and subsequent pattern transfer in a Mo/Si multilayer by reactive ion etching. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 66, S685-S688.
Hartwich, J., et al., 1998. STM writing of artificial nanostructures in ultrathin PMMA and SAM resists and subsequent pattern transfer in a Mo/Si multilayer by reactive ion etching. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 66, p S685-S688.
J. Hartwich, et al., “STM writing of artificial nanostructures in ultrathin PMMA and SAM resists and subsequent pattern transfer in a Mo/Si multilayer by reactive ion etching”, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol. 66, 1998, pp. S685-S688.
Hartwich, J., Dreeskornfeld, L., Heisig, V., Rahn, S., Wehmeyer, O., Kleineberg, U., Heinzmann, U.: STM writing of artificial nanostructures in ultrathin PMMA and SAM resists and subsequent pattern transfer in a Mo/Si multilayer by reactive ion etching. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. 66, S685-S688 (1998).
Hartwich, J, Dreeskornfeld, L, Heisig, V, Rahn, S, Wehmeyer, O, Kleineberg, U, and Heinzmann, Ulrich. “STM writing of artificial nanostructures in ultrathin PMMA and SAM resists and subsequent pattern transfer in a Mo/Si multilayer by reactive ion etching”. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 66 (1998): S685-S688.