Pentamethylcyclopentadienyl disilane as a novel precursor for the CVD of thin silicon films

Klipp A, Hamelmann F, Haindl G, Hartwich J, Kleineberg U, Jutzi P, Heinzmann U (2000)
CHEMICAL VAPOR DEPOSITION 6(2): 63-66.

Journal Article | Published | English

No fulltext has been uploaded

Author
; ; ; ; ; ;
Abstract
There is a strong demand for alternative precursors for Si CVD that do not have the problems of highly pyrophoric silanes. Me5C5Si2H5 is an easy to handle liquid precursor that shows promise for CVD of Si-containing films. The fragmentation process (see Figure) has been studied by in-situ mass spectrometry and the pronounced leaving group character results in no carbon incorporation.
Publishing Year
ISSN
eISSN
PUB-ID

Cite this

Klipp A, Hamelmann F, Haindl G, et al. Pentamethylcyclopentadienyl disilane as a novel precursor for the CVD of thin silicon films. CHEMICAL VAPOR DEPOSITION. 2000;6(2):63-66.
Klipp, A., Hamelmann, F., Haindl, G., Hartwich, J., Kleineberg, U., Jutzi, P., & Heinzmann, U. (2000). Pentamethylcyclopentadienyl disilane as a novel precursor for the CVD of thin silicon films. CHEMICAL VAPOR DEPOSITION, 6(2), 63-66.
Klipp, A., Hamelmann, F., Haindl, G., Hartwich, J., Kleineberg, U., Jutzi, P., and Heinzmann, U. (2000). Pentamethylcyclopentadienyl disilane as a novel precursor for the CVD of thin silicon films. CHEMICAL VAPOR DEPOSITION 6, 63-66.
Klipp, A., et al., 2000. Pentamethylcyclopentadienyl disilane as a novel precursor for the CVD of thin silicon films. CHEMICAL VAPOR DEPOSITION, 6(2), p 63-66.
A. Klipp, et al., “Pentamethylcyclopentadienyl disilane as a novel precursor for the CVD of thin silicon films”, CHEMICAL VAPOR DEPOSITION, vol. 6, 2000, pp. 63-66.
Klipp, A., Hamelmann, F., Haindl, G., Hartwich, J., Kleineberg, U., Jutzi, P., Heinzmann, U.: Pentamethylcyclopentadienyl disilane as a novel precursor for the CVD of thin silicon films. CHEMICAL VAPOR DEPOSITION. 6, 63-66 (2000).
Klipp, A, Hamelmann, Frank, Haindl, G, Hartwich, J, Kleineberg, U, Jutzi, Peter, and Heinzmann, Ulrich. “Pentamethylcyclopentadienyl disilane as a novel precursor for the CVD of thin silicon films”. CHEMICAL VAPOR DEPOSITION 6.2 (2000): 63-66.
This data publication is cited in the following publications:
This publication cites the following data publications:

Export

0 Marked Publications

Open Data PUB

Web of Science

View record in Web of Science®

Search this title in

Google Scholar