Deposition of hexagonal GaN using n-propylamine as a nitrogen precursor

Liu Z-J, Atakan B, Kohse-Höinghaus K (2000)
JOURNAL OF CRYSTAL GROWTH 219(1-2): 176-179.

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A new gaseous mixture containing n-propylamine, trimethylgallium (TMG) and ammonia was used to deposit gallium nitride films. Pure and transparent, polycrystalline films were obtained and analysed by scanning electron microscopy (SEM) and Raman spectroscopy. n-Propylamine has an important influence on the crystal structure of the resulting gallium nitride deposits, and the presence of n-propylamine in the reaction system thus provides a new solution for deposition of high-quality gallium nitride films. (C) 2000 Elsevier Science B.V. All rights reserved.
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Liu Z-J, Atakan B, Kohse-Höinghaus K. Deposition of hexagonal GaN using n-propylamine as a nitrogen precursor. JOURNAL OF CRYSTAL GROWTH. 2000;219(1-2):176-179.
Liu, Z. - J., Atakan, B., & Kohse-Höinghaus, K. (2000). Deposition of hexagonal GaN using n-propylamine as a nitrogen precursor. JOURNAL OF CRYSTAL GROWTH, 219(1-2), 176-179.
Liu, Z. - J., Atakan, B., and Kohse-Höinghaus, K. (2000). Deposition of hexagonal GaN using n-propylamine as a nitrogen precursor. JOURNAL OF CRYSTAL GROWTH 219, 176-179.
Liu, Z.-J., Atakan, B., & Kohse-Höinghaus, K., 2000. Deposition of hexagonal GaN using n-propylamine as a nitrogen precursor. JOURNAL OF CRYSTAL GROWTH, 219(1-2), p 176-179.
Z.-J. Liu, B. Atakan, and K. Kohse-Höinghaus, “Deposition of hexagonal GaN using n-propylamine as a nitrogen precursor”, JOURNAL OF CRYSTAL GROWTH, vol. 219, 2000, pp. 176-179.
Liu, Z.-J., Atakan, B., Kohse-Höinghaus, K.: Deposition of hexagonal GaN using n-propylamine as a nitrogen precursor. JOURNAL OF CRYSTAL GROWTH. 219, 176-179 (2000).
Liu, Zhi-Jie, Atakan, Burak, and Kohse-Höinghaus, Katharina. “Deposition of hexagonal GaN using n-propylamine as a nitrogen precursor”. JOURNAL OF CRYSTAL GROWTH 219.1-2 (2000): 176-179.
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