Switching stability of magnetic tunnel junctions with an artificial antiferromagnet

Schmalhorst J-M, Bruckl H, Reiss G, Kinder R, Gieres G, Wecker J (2000)
APPLIED PHYSICS LETTERS 77(21): 3456-3458.

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Abstract
Avoiding fatigue in the switching of magnetic tunnel junctions is crucial for their long-term use in nonvolatile magnetic memories. We compare the switching stability of two types of junctions with different soft layers: Fe or Ni81Fe19, both with Co dusting at the barrier interface. The magnetically hard electrode is a Co/Cu/Co artificial antiferromagnet. While the tunneling magnetoresistance (TMR) remains unchanged after 10(4) cycles in a 4 kA/m rotating field, it decreases by more than 45% due to uniaxial switching. Fringing fields of domain walls in the soft layer and an intrinsic instability of Co/Cu/Co are identified as the main reasons. Magnetization reversal by two perpendicular switching pulses avoids this magnetic degradation and maintains a full TMR signal. (C) 2000 American Institute of Physics. [S0003-6951(00)01447-9].
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Schmalhorst J-M, Bruckl H, Reiss G, Kinder R, Gieres G, Wecker J. Switching stability of magnetic tunnel junctions with an artificial antiferromagnet. APPLIED PHYSICS LETTERS. 2000;77(21):3456-3458.
Schmalhorst, J. - M., Bruckl, H., Reiss, G., Kinder, R., Gieres, G., & Wecker, J. (2000). Switching stability of magnetic tunnel junctions with an artificial antiferromagnet. APPLIED PHYSICS LETTERS, 77(21), 3456-3458.
Schmalhorst, J. - M., Bruckl, H., Reiss, G., Kinder, R., Gieres, G., and Wecker, J. (2000). Switching stability of magnetic tunnel junctions with an artificial antiferromagnet. APPLIED PHYSICS LETTERS 77, 3456-3458.
Schmalhorst, J.-M., et al., 2000. Switching stability of magnetic tunnel junctions with an artificial antiferromagnet. APPLIED PHYSICS LETTERS, 77(21), p 3456-3458.
J.-M. Schmalhorst, et al., “Switching stability of magnetic tunnel junctions with an artificial antiferromagnet”, APPLIED PHYSICS LETTERS, vol. 77, 2000, pp. 3456-3458.
Schmalhorst, J.-M., Bruckl, H., Reiss, G., Kinder, R., Gieres, G., Wecker, J.: Switching stability of magnetic tunnel junctions with an artificial antiferromagnet. APPLIED PHYSICS LETTERS. 77, 3456-3458 (2000).
Schmalhorst, Jan-Michael, Bruckl, H, Reiss, Günter, Kinder, R, Gieres, G, and Wecker, J. “Switching stability of magnetic tunnel junctions with an artificial antiferromagnet”. APPLIED PHYSICS LETTERS 77.21 (2000): 3456-3458.
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