Cyclopentadienyl germanes as novel precursors for the CVD of thin germanium films

Dittmar K, Jutzi P, Schmalhorst J-M, Reiss G (2001)
CHEMICAL VAPOR DEPOSITION 7(5): 193.

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Zeitschriftenaufsatz | Veröffentlicht | Englisch
Abstract / Bemerkung
Communication: Novel metal-organic precursors for depositing germanium are reported. Cyclopentadienyl germanes are shown to have advantages over other precursors. They are easy to handle, and deposit germane thin films for the relatively low temperature range of 200 to 500 degreesC. The decomposition mechanism of pentamethylcyclopentadienyl germane (see Figure), suggests that the most likely route for its decomposition is through the production of GeH2.
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CHEMICAL VAPOR DEPOSITION
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7
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5
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193
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Dittmar K, Jutzi P, Schmalhorst J-M, Reiss G. Cyclopentadienyl germanes as novel precursors for the CVD of thin germanium films. CHEMICAL VAPOR DEPOSITION. 2001;7(5):193.
Dittmar, K., Jutzi, P., Schmalhorst, J. - M., & Reiss, G. (2001). Cyclopentadienyl germanes as novel precursors for the CVD of thin germanium films. CHEMICAL VAPOR DEPOSITION, 7(5), 193. doi:10.1002/1521-3862(200109)7:5<193::AID-CVDE193>3.0.CO;2-M
Dittmar, K., Jutzi, P., Schmalhorst, J. - M., and Reiss, G. (2001). Cyclopentadienyl germanes as novel precursors for the CVD of thin germanium films. CHEMICAL VAPOR DEPOSITION 7, 193.
Dittmar, K., et al., 2001. Cyclopentadienyl germanes as novel precursors for the CVD of thin germanium films. CHEMICAL VAPOR DEPOSITION, 7(5), p 193.
K. Dittmar, et al., “Cyclopentadienyl germanes as novel precursors for the CVD of thin germanium films”, CHEMICAL VAPOR DEPOSITION, vol. 7, 2001, pp. 193.
Dittmar, K., Jutzi, P., Schmalhorst, J.-M., Reiss, G.: Cyclopentadienyl germanes as novel precursors for the CVD of thin germanium films. CHEMICAL VAPOR DEPOSITION. 7, 193 (2001).
Dittmar, K, Jutzi, Peter, Schmalhorst, Jan-Michael, and Reiss, Günter. “Cyclopentadienyl germanes as novel precursors for the CVD of thin germanium films”. CHEMICAL VAPOR DEPOSITION 7.5 (2001): 193.