Resonance magneto-resistance in double barrier structure with spin-valve

Ryzhanova N, Reiss G, Kanjouri F, Vedyayev A (2004)
PHYSICS LETTERS A 329(4-5): 392-395.

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Zeitschriftenaufsatz | Veröffentlicht | Englisch
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Abstract / Bemerkung
The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant tunnelling, due to the quantum well states of the electron confined between two barriers, sharply depends on the mutual orientation of the magnetizations of ferromagnetic layers F. The calculated optimistic value of TMR exceeds 2000%. (C) 2004 Elsevier B.V. All rights reserved.
Erscheinungsjahr
Zeitschriftentitel
PHYSICS LETTERS A
Band
329
Zeitschriftennummer
4-5
Seite
392-395
ISSN
PUB-ID

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Ryzhanova N, Reiss G, Kanjouri F, Vedyayev A. Resonance magneto-resistance in double barrier structure with spin-valve. PHYSICS LETTERS A. 2004;329(4-5):392-395.
Ryzhanova, N., Reiss, G., Kanjouri, F., & Vedyayev, A. (2004). Resonance magneto-resistance in double barrier structure with spin-valve. PHYSICS LETTERS A, 329(4-5), 392-395. doi:10.1016/j.physleta.2004.06.069
Ryzhanova, N., Reiss, G., Kanjouri, F., and Vedyayev, A. (2004). Resonance magneto-resistance in double barrier structure with spin-valve. PHYSICS LETTERS A 329, 392-395.
Ryzhanova, N., et al., 2004. Resonance magneto-resistance in double barrier structure with spin-valve. PHYSICS LETTERS A, 329(4-5), p 392-395.
N. Ryzhanova, et al., “Resonance magneto-resistance in double barrier structure with spin-valve”, PHYSICS LETTERS A, vol. 329, 2004, pp. 392-395.
Ryzhanova, N., Reiss, G., Kanjouri, F., Vedyayev, A.: Resonance magneto-resistance in double barrier structure with spin-valve. PHYSICS LETTERS A. 329, 392-395 (2004).
Ryzhanova, N, Reiss, Günter, Kanjouri, F, and Vedyayev, A. “Resonance magneto-resistance in double barrier structure with spin-valve”. PHYSICS LETTERS A 329.4-5 (2004): 392-395.