Inelastic electron tunneling spectroscopy and bias voltage dependence of magnetic tunnel junctions with polycrystalline Co2MnSi electrode

Schmalhorst J-M, Kammerer S, Reiss G, Hütten A (2005)
APPLIED PHYSICS LETTERS 86(5): 052501.

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Zeitschriftenaufsatz | Veröffentlicht | Englisch
Abstract / Bemerkung
Spintronics needs half-metallic materials implemented in technologically relevant devices. We prepare Co2MnSi/AlOx/Co7Fe3 junctions showing a tunneling magnetoresistance of 94.6% at 1 mV and 20 K. Their inelastic electron tunneling spectra at 20 K show typical magnon and phonon excitations in the electrode and the barrier and an additional shoulder around -22 mV not observed in Co7Fe3/AlOx/Ni81Fe19 reference junctions. Furthermore, the bias voltage and temperature dependence of the tunneling magnetoresistance is considerably larger than for the reference junctions. The transport properties are discussed with respect to a variety of current contributions associated with the structural and magnetic properties of the. Co2MnSi/AlOx interface. (C) 2005 American Institute of Physics.
Erscheinungsjahr
Zeitschriftentitel
APPLIED PHYSICS LETTERS
Band
86
Zeitschriftennummer
5
Artikelnummer
052501
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PUB-ID

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Schmalhorst J-M, Kammerer S, Reiss G, Hütten A. Inelastic electron tunneling spectroscopy and bias voltage dependence of magnetic tunnel junctions with polycrystalline Co2MnSi electrode. APPLIED PHYSICS LETTERS. 2005;86(5): 052501.
Schmalhorst, J. - M., Kammerer, S., Reiss, G., & Hütten, A. (2005). Inelastic electron tunneling spectroscopy and bias voltage dependence of magnetic tunnel junctions with polycrystalline Co2MnSi electrode. APPLIED PHYSICS LETTERS, 86(5), 052501. doi:10.1063/1.1853526
Schmalhorst, J. - M., Kammerer, S., Reiss, G., and Hütten, A. (2005). Inelastic electron tunneling spectroscopy and bias voltage dependence of magnetic tunnel junctions with polycrystalline Co2MnSi electrode. APPLIED PHYSICS LETTERS 86:052501.
Schmalhorst, J.-M., et al., 2005. Inelastic electron tunneling spectroscopy and bias voltage dependence of magnetic tunnel junctions with polycrystalline Co2MnSi electrode. APPLIED PHYSICS LETTERS, 86(5): 052501.
J.-M. Schmalhorst, et al., “Inelastic electron tunneling spectroscopy and bias voltage dependence of magnetic tunnel junctions with polycrystalline Co2MnSi electrode”, APPLIED PHYSICS LETTERS, vol. 86, 2005, : 052501.
Schmalhorst, J.-M., Kammerer, S., Reiss, G., Hütten, A.: Inelastic electron tunneling spectroscopy and bias voltage dependence of magnetic tunnel junctions with polycrystalline Co2MnSi electrode. APPLIED PHYSICS LETTERS. 86, : 052501 (2005).
Schmalhorst, Jan-Michael, Kammerer, S, Reiss, Günter, and Hütten, Andreas. “Inelastic electron tunneling spectroscopy and bias voltage dependence of magnetic tunnel junctions with polycrystalline Co2MnSi electrode”. APPLIED PHYSICS LETTERS 86.5 (2005): 052501.