Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films

Szekeres A, Simeonov S, Gushterov A, Nikolova T, Hamelmann F, Heinzmann U (2005)
In: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 7. NATL INST OPTOELECTRONICS: 553-556.

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The electrical properties of MIS structures with silicon oxynitride films, deposited at 200 degrees C in a RF-plasma CVD reactor using Si(OC2H5)(4) (TEOS) as a precursor and nitrogen as the gas ambient have been studied. The analysis of the capacitance-voltage and current-voltage characteristics has shown that a larger DC bias yields larger densities of dielectric charge and interface traps in the growing films, and therefore, a lower specific resistivity of the SiOxNy films.
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Szekeres A, Simeonov S, Gushterov A, Nikolova T, Hamelmann F, Heinzmann U. Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films. In: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. Vol 7. NATL INST OPTOELECTRONICS; 2005: 553-556.
Szekeres, A., Simeonov, S., Gushterov, A., Nikolova, T., Hamelmann, F., & Heinzmann, U. (2005). Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7(1), 553-556.
Szekeres, A., Simeonov, S., Gushterov, A., Nikolova, T., Hamelmann, F., and Heinzmann, U. (2005). “Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films” in JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol. 7, (NATL INST OPTOELECTRONICS), 553-556.
Szekeres, A., et al., 2005. Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films. In JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. no.7 NATL INST OPTOELECTRONICS, pp. 553-556.
A. Szekeres, et al., “Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films”, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol. 7, NATL INST OPTOELECTRONICS, 2005, pp.553-556.
Szekeres, A., Simeonov, S., Gushterov, A., Nikolova, T., Hamelmann, F., Heinzmann, U.: Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 7, p. 553-556. NATL INST OPTOELECTRONICS (2005).
Szekeres, A, Simeonov, S, Gushterov, A, Nikolova, T, Hamelmann, Frank, and Heinzmann, Ulrich. “Electrical properties of plasma-assisted CVD deposited thin silicon oxynitride films”. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. NATL INST OPTOELECTRONICS, 2005.Vol. 7. 553-556.
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