Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis

Hamelmann F, Heinzmann U, Szekeres A, Kirov N, Nikolova T (2005)
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 7(1): 389-392.

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Silicon oxide thin films deposited on Si substrates in a RF-plasma CVD reactor, using Si(OC2H5)(4) (TEOS) as the precursor and oxygen as the gas ambient, were studied by IR spectrophotometry. All depositions were performed at a substrate temperature of 200 degrees C, a plasma power of 20 or 80 W and with a DC-bias of -120 V applied to the Si substrate. The observed IR peaks were assigned to corresponding vibrational modes. Peaks related to Si-H, C-H and OH bond vibrations were also detected. Some degree of porosity exists, resulting in a lower refractive index of the films than that typical for SiO2 material.
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Hamelmann F, Heinzmann U, Szekeres A, Kirov N, Nikolova T. Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 2005;7(1):389-392.
Hamelmann, F., Heinzmann, U., Szekeres, A., Kirov, N., & Nikolova, T. (2005). Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7(1), 389-392.
Hamelmann, F., Heinzmann, U., Szekeres, A., Kirov, N., and Nikolova, T. (2005). Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 7, 389-392.
Hamelmann, F., et al., 2005. Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7(1), p 389-392.
F. Hamelmann, et al., “Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis”, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol. 7, 2005, pp. 389-392.
Hamelmann, F., Heinzmann, U., Szekeres, A., Kirov, N., Nikolova, T.: Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 7, 389-392 (2005).
Hamelmann, Frank, Heinzmann, Ulrich, Szekeres, A, Kirov, N, and Nikolova, T. “Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis”. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 7.1 (2005): 389-392.
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