Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis

Hamelmann F, Heinzmann U, Szekeres A, Kirov N, Nikolova T (2005)
In: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 7. NATL INST OPTOELECTRONICS: 389-392.

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Abstract
Silicon oxide thin films deposited on Si substrates in a RF-plasma CVD reactor, using Si(OC2H5)(4) (TEOS) as the precursor and oxygen as the gas ambient, were studied by IR spectrophotometry. All depositions were performed at a substrate temperature of 200 degrees C, a plasma power of 20 or 80 W and with a DC-bias of -120 V applied to the Si substrate. The observed IR peaks were assigned to corresponding vibrational modes. Peaks related to Si-H, C-H and OH bond vibrations were also detected. Some degree of porosity exists, resulting in a lower refractive index of the films than that typical for SiO2 material.
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Hamelmann F, Heinzmann U, Szekeres A, Kirov N, Nikolova T. Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis. In: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. Vol 7. NATL INST OPTOELECTRONICS; 2005: 389-392.
Hamelmann, F., Heinzmann, U., Szekeres, A., Kirov, N., & Nikolova, T. (2005). Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7(1), 389-392.
Hamelmann, F., Heinzmann, U., Szekeres, A., Kirov, N., and Nikolova, T. (2005). “Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis” in JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol. 7, (NATL INST OPTOELECTRONICS), 389-392.
Hamelmann, F., et al., 2005. Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis. In JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. no.7 NATL INST OPTOELECTRONICS, pp. 389-392.
F. Hamelmann, et al., “Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis”, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol. 7, NATL INST OPTOELECTRONICS, 2005, pp.389-392.
Hamelmann, F., Heinzmann, U., Szekeres, A., Kirov, N., Nikolova, T.: Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 7, p. 389-392. NATL INST OPTOELECTRONICS (2005).
Hamelmann, Frank, Heinzmann, Ulrich, Szekeres, A, Kirov, N, and Nikolova, T. “Deposition of silicon oxide thin films in TEOS with addition of oxygen to the plasma ambient: IR spectra analysis”. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. NATL INST OPTOELECTRONICS, 2005.Vol. 7. 389-392.
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