High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy

Neuhäusler U, Oelsner A, Slieh J, Brzeska M, Wonisch A, Westerwalbesloh T, Brückl H, Schicketanz M, Weber N, Escher M, Merkel M, et al. (2006)
APPLIED PHYSICS LETTERS 88(5): 053113.

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Zeitschriftenaufsatz | Veröffentlicht | Englisch
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Abstract / Bemerkung
We report on the development and first experimental results of a "at wavelength" full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet (EUV) lithography. According to the International Semiconductor Roadmap by Sematech, less than 5x10(-3) defects per cm(2) should be present on such multilayer mask blank to enable mass production of microelectronics using EUV lithography, thus fast high-resolution methods for mask defect inspection and localization are needed. Our approach uses a photoemission electron microscope in a normal incidence illumination mode at 13 nm to image the photoelectron emission induced by the EUV wave field on the multilayer mask blank surface. We show that by these means, buried defects in the multilayer stack can be probed down to a lateral size of 50 nm. (c) 2006 American Institute of Physics.
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APPLIED PHYSICS LETTERS
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88
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5
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053113
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Neuhäusler U, Oelsner A, Slieh J, et al. High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy. APPLIED PHYSICS LETTERS. 2006;88(5): 053113.
Neuhäusler, U., Oelsner, A., Slieh, J., Brzeska, M., Wonisch, A., Westerwalbesloh, T., Brückl, H., et al. (2006). High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy. APPLIED PHYSICS LETTERS, 88(5), 053113. doi:10.1063/1.2168263
Neuhäusler, U., Oelsner, A., Slieh, J., Brzeska, M., Wonisch, A., Westerwalbesloh, T., Brückl, H., Schicketanz, M., Weber, N., Escher, M., et al. (2006). High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy. APPLIED PHYSICS LETTERS 88:053113.
Neuhäusler, U., et al., 2006. High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy. APPLIED PHYSICS LETTERS, 88(5): 053113.
U. Neuhäusler, et al., “High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy”, APPLIED PHYSICS LETTERS, vol. 88, 2006, : 053113.
Neuhäusler, U., Oelsner, A., Slieh, J., Brzeska, M., Wonisch, A., Westerwalbesloh, T., Brückl, H., Schicketanz, M., Weber, N., Escher, M., Merkel, M., Schonhense, G., Kleineberg, U., Heinzmann, U.: High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy. APPLIED PHYSICS LETTERS. 88, : 053113 (2006).
Neuhäusler, U, Oelsner, A, Slieh, J, Brzeska, M, Wonisch, A, Westerwalbesloh, T, Brückl, Hubert, Schicketanz, M, Weber, N, Escher, M, Merkel, M, Schonhense, G, Kleineberg, U, and Heinzmann, Ulrich. “High-resolution actinic defect inspection for extreme ultraviolet lithography multilayer mask blanks by photoemission electron microscopy”. APPLIED PHYSICS LETTERS 88.5 (2006): 053113.