Transport properties of magnetic tunnel junctions with Co2MnSi electrodes: The influence of temperature-dependent interface magnetization and electronic band structure

Schmalhorst J-M, Thomas A, Kaemmerer S, Schebaum O, Ebke D, Sacher M, Reiss G, Hütten A, Turchanin A, Gölzhäuser A, Arenholz E (2007)
PHYSICAL REVIEW B 75(1).

Journal Article | Published | English

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Abstract
The transport properties of Co2MnSi/AlOx/Co-Fe magnetic tunnel junctions showing a tunnel magnetorestistance of 95% at low temperatures are discussed with respect to temperature-dependent magnetic moments at the Co2MnSi/AlOx interface and electronic band structure effects. These junctions show a considerably larger temperature and bias voltage dependence of the tunneling magnetoresistance compared to Co-Fe-B/AlOx/Co-Fe-B junctions, although the effective spin polarization of Co2MnSi (66%) is larger than Co-Fe-B (60%). Especially, the tunnel magnetoresistance of the Co2MnSi based junctions becomes inverse for large bias voltages. With increasing atomic disorder of the interfacial Co2MnSi its magnetic moments decrease and show a stronger temperature dependence. Even for the best atomic ordering achieved the corresponding spin-wave parameters of Mn and Co at the Co2MnSi/AlOx interface are significantly larger than expected for Co2MnSi bulk and also larger than the spin-wave parameters of Co and Fe at a Co-Fe-B/AlOx interface. The influence of enhanced interfacial magnon excitation in the Co2MnSi/AlOx/Co-Fe junctions on their transport properties will be discussed as well as possible origins for the negative tunnel magnetoresistance at high bias voltages.
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Schmalhorst J-M, Thomas A, Kaemmerer S, et al. Transport properties of magnetic tunnel junctions with Co2MnSi electrodes: The influence of temperature-dependent interface magnetization and electronic band structure. PHYSICAL REVIEW B. 2007;75(1).
Schmalhorst, J. - M., Thomas, A., Kaemmerer, S., Schebaum, O., Ebke, D., Sacher, M., Reiss, G., et al. (2007). Transport properties of magnetic tunnel junctions with Co2MnSi electrodes: The influence of temperature-dependent interface magnetization and electronic band structure. PHYSICAL REVIEW B, 75(1).
Schmalhorst, J. - M., Thomas, A., Kaemmerer, S., Schebaum, O., Ebke, D., Sacher, M., Reiss, G., Hütten, A., Turchanin, A., Gölzhäuser, A., et al. (2007). Transport properties of magnetic tunnel junctions with Co2MnSi electrodes: The influence of temperature-dependent interface magnetization and electronic band structure. PHYSICAL REVIEW B 75.
Schmalhorst, J.-M., et al., 2007. Transport properties of magnetic tunnel junctions with Co2MnSi electrodes: The influence of temperature-dependent interface magnetization and electronic band structure. PHYSICAL REVIEW B, 75(1).
J.-M. Schmalhorst, et al., “Transport properties of magnetic tunnel junctions with Co2MnSi electrodes: The influence of temperature-dependent interface magnetization and electronic band structure”, PHYSICAL REVIEW B, vol. 75, 2007.
Schmalhorst, J.-M., Thomas, A., Kaemmerer, S., Schebaum, O., Ebke, D., Sacher, M., Reiss, G., Hütten, A., Turchanin, A., Gölzhäuser, A., Arenholz, E.: Transport properties of magnetic tunnel junctions with Co2MnSi electrodes: The influence of temperature-dependent interface magnetization and electronic band structure. PHYSICAL REVIEW B. 75, (2007).
Schmalhorst, Jan-Michael, Thomas, Andy, Kaemmerer, S., Schebaum, Oliver, Ebke, Daniel, Sacher, Marc, Reiss, Günter, Hütten, Andreas, Turchanin, Andrey, Gölzhäuser, Armin, and Arenholz, E. “Transport properties of magnetic tunnel junctions with Co2MnSi electrodes: The influence of temperature-dependent interface magnetization and electronic band structure”. PHYSICAL REVIEW B 75.1 (2007).
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