Chemical and magnetic interface properties of tunnel junctions with Co2MnSi/Co2FeSi multilayer electrode showing large tunneling magnetoresistance

Schmalhorst J-M, Ebke D, Sacher M, Liu N-N, Thomas A, Reiss G, Hütten A, Arenholz E (2007)
In: IEEE TRANSACTIONS ON MAGNETICS. 43. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC: 2806-2808.

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Abstract
Transport, as well as chemical and magnetic interface properties of two kinds of magnetic tunnel junctions (MTJs) with Co2FeSi electrode, Al-O barrier, and Co-Fe counter electrode, are investigated. For junctions with Co2FeSi single-layer electrodes, a tunnel magnetoresistance of up to 52% is found after optimal annealing for an optimal Al thickness of 1.5 nm, whereas the room temperature bulk magnetization of the Co2FeSi film reaches only 75% of the expected value. By using a [Co2MnSi/Co2FeSi](x10) multilayer electrode, the magnetoresistance can be increased to 114%, corresponding to a large spin polarization of 0.74, and the full bulk magnetization is reached. For Al thickness smaller than 1 nm, the TMR of both kinds of MTJs decreases rapidly to zero. On the other hand, for 2- to 3-nm-thick Al, the TMR decreases only slowly. The Al thickness dependence of the TMR is directly correlated to the element-specific magnetic moments of Fe and Co at the Co2FeSi/Al-O interface for all Al thickness. Especially, for optimal Al thickness and annealing, the interfacial Fe moment of the single-layer electrode is about 20% smaller than for the multilayer electrode, indicating smaller atomic disorder at the barrier interface for the latter MTJ.
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Schmalhorst J-M, Ebke D, Sacher M, et al. Chemical and magnetic interface properties of tunnel junctions with Co2MnSi/Co2FeSi multilayer electrode showing large tunneling magnetoresistance. In: IEEE TRANSACTIONS ON MAGNETICS. Vol 43. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC; 2007: 2806-2808.
Schmalhorst, J. - M., Ebke, D., Sacher, M., Liu, N. - N., Thomas, A., Reiss, G., Hütten, A., et al. (2007). Chemical and magnetic interface properties of tunnel junctions with Co2MnSi/Co2FeSi multilayer electrode showing large tunneling magnetoresistance. IEEE TRANSACTIONS ON MAGNETICS, 43(6), 2806-2808.
Schmalhorst, J. - M., Ebke, D., Sacher, M., Liu, N. - N., Thomas, A., Reiss, G., Hütten, A., and Arenholz, E. (2007). “Chemical and magnetic interface properties of tunnel junctions with Co2MnSi/Co2FeSi multilayer electrode showing large tunneling magnetoresistance” in IEEE TRANSACTIONS ON MAGNETICS, vol. 43, (IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC), 2806-2808.
Schmalhorst, J.-M., et al., 2007. Chemical and magnetic interface properties of tunnel junctions with Co2MnSi/Co2FeSi multilayer electrode showing large tunneling magnetoresistance. In IEEE TRANSACTIONS ON MAGNETICS. no.43 IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, pp. 2806-2808.
J.-M. Schmalhorst, et al., “Chemical and magnetic interface properties of tunnel junctions with Co2MnSi/Co2FeSi multilayer electrode showing large tunneling magnetoresistance”, IEEE TRANSACTIONS ON MAGNETICS, vol. 43, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2007, pp.2806-2808.
Schmalhorst, J.-M., Ebke, D., Sacher, M., Liu, N.-N., Thomas, A., Reiss, G., Hütten, A., Arenholz, E.: Chemical and magnetic interface properties of tunnel junctions with Co2MnSi/Co2FeSi multilayer electrode showing large tunneling magnetoresistance. IEEE TRANSACTIONS ON MAGNETICS. 43, p. 2806-2808. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC (2007).
Schmalhorst, Jan-Michael, Ebke, Daniel, Sacher, Marc, Liu, Ning-Ning, Thomas, Andy, Reiss, Günter, Hütten, Andreas, and Arenholz, Elke. “Chemical and magnetic interface properties of tunnel junctions with Co2MnSi/Co2FeSi multilayer electrode showing large tunneling magnetoresistance”. IEEE TRANSACTIONS ON MAGNETICS. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2007.Vol. 43. 2806-2808.
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