Actinic inspection of EUVL mask blank defects by photoemission electron microscopy: Effect of inspection wavelength variation

Lin J, Neuhaeusler U, Slieh J, Brechling A, Heinzmann U, Weber N, Escher M, Merkel M, Oelsner A, Valdaitsev D, Schoenhense G, et al. (2007)
MICROELECTRONIC ENGINEERING 84(5-8): 1011-1014.

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Konferenzbeitrag | Veröffentlicht | Englisch
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Abstract / Bemerkung
Extreme ultraviolet (EUV) photoemission electron microscopy (PEEM), which employs standing wave field illumination of a sample, is a potential tool for at-wavelength inspection of phase defects on extreme ultraviolet lithography (EUVL) mask blank. In this paper, we will demonstrate that the contrast of an underneath multilayer programmed defect in EUV-PEEM image is strongly dependent on the inspection wavelength. The observed contrast variation at different inspection wavelengths is in good agreement with the simulation result of a standing wave field on surface of multilayer stack in the mask blank sample. We also observed some native defects on the programmed defect sample, and found that some of them reverse their contrast with varying inspection wavelengths while others do not. (c) 2007 Elsevier B.V. All rights reserved.
Erscheinungsjahr
Band
84
Zeitschriftennummer
5-8
Seite
1011-1014
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PUB-ID

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Lin J, Neuhaeusler U, Slieh J, et al. Actinic inspection of EUVL mask blank defects by photoemission electron microscopy: Effect of inspection wavelength variation. MICROELECTRONIC ENGINEERING. 2007;84(5-8):1011-1014.
Lin, J., Neuhaeusler, U., Slieh, J., Brechling, A., Heinzmann, U., Weber, N., Escher, M., et al. (2007). Actinic inspection of EUVL mask blank defects by photoemission electron microscopy: Effect of inspection wavelength variation. MICROELECTRONIC ENGINEERING, 84(5-8), 1011-1014. doi:10.1016/j.mee.2007.01.106
Lin, J., Neuhaeusler, U., Slieh, J., Brechling, A., Heinzmann, U., Weber, N., Escher, M., Merkel, M., Oelsner, A., Valdaitsev, D., et al. (2007). Actinic inspection of EUVL mask blank defects by photoemission electron microscopy: Effect of inspection wavelength variation. MICROELECTRONIC ENGINEERING 84, 1011-1014.
Lin, J., et al., 2007. Actinic inspection of EUVL mask blank defects by photoemission electron microscopy: Effect of inspection wavelength variation. MICROELECTRONIC ENGINEERING, 84(5-8), p 1011-1014.
J. Lin, et al., “Actinic inspection of EUVL mask blank defects by photoemission electron microscopy: Effect of inspection wavelength variation”, MICROELECTRONIC ENGINEERING, vol. 84, 2007, pp. 1011-1014.
Lin, J., Neuhaeusler, U., Slieh, J., Brechling, A., Heinzmann, U., Weber, N., Escher, M., Merkel, M., Oelsner, A., Valdaitsev, D., Schoenhense, G., Quesnel, E., Kleineberg, U.: Actinic inspection of EUVL mask blank defects by photoemission electron microscopy: Effect of inspection wavelength variation. MICROELECTRONIC ENGINEERING. 84, 1011-1014 (2007).
Lin, Jingquan, Neuhaeusler, U., Slieh, J., Brechling, Armin, Heinzmann, Ulrich, Weber, N., Escher, M., Merkel, M., Oelsner, A., Valdaitsev, D., Schoenhense, G., Quesnel, E., and Kleineberg, U. “Actinic inspection of EUVL mask blank defects by photoemission electron microscopy: Effect of inspection wavelength variation”. MICROELECTRONIC ENGINEERING 84.5-8 (2007): 1011-1014.