Memristive switching of MgO based magnetic tunnel junctions

Krzysteczko P, Reiss G, Thomas A (2009)
APPLIED PHYSICS LETTERS 95(11): 112508.

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Zeitschriftenaufsatz | Veröffentlicht | Englisch
Abstract / Bemerkung
Here we demonstrate that both, tunnel magnetoresistance (TMR) and resistive switching (RS), can be observed simultaneously in nanoscale magnetic tunnel junctions. The devices show bipolar RS of 6% and TMR ratios of about 100%. For each magnetic state, multiple resistive states are created depending on the bias history, which provides a method for multibit data storage and logic. The electronic transport measurements are discussed in the framework of a memristive system. Differently prepared MgO barriers are compared to gain insight into the switching mechanism. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3224193]
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APPLIED PHYSICS LETTERS
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95
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11
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112508
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Krzysteczko P, Reiss G, Thomas A. Memristive switching of MgO based magnetic tunnel junctions. APPLIED PHYSICS LETTERS. 2009;95(11):112508.
Krzysteczko, P., Reiss, G., & Thomas, A. (2009). Memristive switching of MgO based magnetic tunnel junctions. APPLIED PHYSICS LETTERS, 95(11), 112508. doi:10.1063/1.3224193
Krzysteczko, P., Reiss, G., and Thomas, A. (2009). Memristive switching of MgO based magnetic tunnel junctions. APPLIED PHYSICS LETTERS 95, 112508.
Krzysteczko, P., Reiss, G., & Thomas, A., 2009. Memristive switching of MgO based magnetic tunnel junctions. APPLIED PHYSICS LETTERS, 95(11), p 112508.
P. Krzysteczko, G. Reiss, and A. Thomas, “Memristive switching of MgO based magnetic tunnel junctions”, APPLIED PHYSICS LETTERS, vol. 95, 2009, pp. 112508.
Krzysteczko, P., Reiss, G., Thomas, A.: Memristive switching of MgO based magnetic tunnel junctions. APPLIED PHYSICS LETTERS. 95, 112508 (2009).
Krzysteczko, Patryk, Reiss, Günter, and Thomas, Andy. “Memristive switching of MgO based magnetic tunnel junctions”. APPLIED PHYSICS LETTERS 95.11 (2009): 112508.

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