CVD of Conducting Ultrathin Copper Films

Bahlawane N, Premkumar PA, Reilmann F, Kohse-Höinghaus K, Wang J, Qi F, Gehl B, Bäumer M (2009)
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156(10): D452-D455.

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Zeitschriftenaufsatz | Veröffentlicht | Englisch
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Abstract / Bemerkung
Miniaturization of electronic devices imposes challenges in terms of materials and production methods, and advances in the chemical vapor deposition (CVD) of metals are a key prerequisite toward reliable interconnects that are essential for their functionality. Electrically conducting ultrathin films of pure copper were grown on glass and silicon substrates starting at a temperature of 195 degrees C. The growth kinetics does not exhibit any measurable nucleation time enabling early stage coalescence and high electrical conductivity. In situ monitoring of the CVD process using synchrotron-based mass spectrometry shows that the enhanced dehydrogenation of alcohols by copper(II) acetylacetonate precursor drives the Cu-0 deposition, which is kinetically favorable already at low temperature. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3205478] All rights reserved.
Erscheinungsjahr
Zeitschriftentitel
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Band
156
Zeitschriftennummer
10
Seite
D452-D455
ISSN
PUB-ID

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Bahlawane N, Premkumar PA, Reilmann F, et al. CVD of Conducting Ultrathin Copper Films. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2009;156(10):D452-D455.
Bahlawane, N., Premkumar, P. A., Reilmann, F., Kohse-Höinghaus, K., Wang, J., Qi, F., Gehl, B., et al. (2009). CVD of Conducting Ultrathin Copper Films. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(10), D452-D455. doi:10.1149/1.3205478
Bahlawane, N., Premkumar, P. A., Reilmann, F., Kohse-Höinghaus, K., Wang, J., Qi, F., Gehl, B., and Bäumer, M. (2009). CVD of Conducting Ultrathin Copper Films. JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156, D452-D455.
Bahlawane, N., et al., 2009. CVD of Conducting Ultrathin Copper Films. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(10), p D452-D455.
N. Bahlawane, et al., “CVD of Conducting Ultrathin Copper Films”, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 156, 2009, pp. D452-D455.
Bahlawane, N., Premkumar, P.A., Reilmann, F., Kohse-Höinghaus, K., Wang, J., Qi, F., Gehl, B., Bäumer, M.: CVD of Conducting Ultrathin Copper Films. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 156, D452-D455 (2009).
Bahlawane, Naoufal, Premkumar, Peter Antony, Reilmann, Frank, Kohse-Höinghaus, Katharina, Wang, Jing, Qi, Fei, Gehl, Bernhard, and Bäumer, Markus. “CVD of Conducting Ultrathin Copper Films”. JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156.10 (2009): D452-D455.